logo

PE3415A Datasheet, semi one

PE3415A mosfet equivalent, p-channel enhancement mode power mosfet.

PE3415A Avg. rating / M : 1.0 rating-13

datasheet Download

PE3415A Datasheet

Features and benefits


* VDS = -20V,ID =-4.5A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 47mΩ @ VGS=-4.5V ESD Rating: 2500V HBM
* High Power and current handing capability
* Lead free pro.

Application

.It is ESD protested. General Features
* VDS = -20V,ID =-4.5A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 47mΩ @ VGS=-4.5V.

Description

The PE3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features .

Image gallery

PE3415A Page 1 PE3415A Page 2 PE3415A Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts